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808nm diode laser manufacturers take you to understand the working principle of laser diodes
- Categories:News
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- Published on:2022-09-30
The 808nm diode laser manufacturer tells you that a crystal diode is a p-n junction formed by a p-type semiconductor and an n-type semiconductor. A space charge layer is formed on both sides of the interface, and a self-built electric field is built.
808nm diode laser manufacturers take you to understand the working principle of laser diodes
The 808nm diode laser manufacturer tells you that a crystal diode is a p-n junction formed by a p-type semiconductor and an n-type semiconductor. A space charge layer is formed on both sides of the interface, and a self-built electric field is built.
- Categories:News
- Author:
- Origin:
- Published on:2022-09-30
The 808nm diode laser manufacturer tells you that a crystal diode is a p-n junction formed by a p-type semiconductor and an n-type semiconductor. A space charge layer is formed on both sides of the interface, and a self-built electric field is built. When there is no applied voltage, the diffusion current caused by the difference in carrier concentration on both sides of the p-n junction is equal to the drift current caused by the self-built electric field and is in an electrical equilibrium state.
808nm diode laser manufacturers tell you that when there is a forward voltage bias outside, the mutual suppression of the external electric field and the self-built electric field increases the diffusion current of carriers and causes forward current.
The 808nm diode laser manufacturer tells you that when there is a reverse voltage bias outside, the external electric field and the self-built electric field are further strengthened, forming a reverse saturation current I0 that is independent of the reverse bias voltage value within a certain reverse voltage range.
The 808nm diode laser manufacturer tells you that when the applied reverse voltage reaches a certain level, the electric field strength in the space charge layer of the p-n junction reaches a critical value, resulting in a multiplication process of carriers, resulting in a large number of electron-hole pairs, resulting in a large number of The reverse breakdown current is called the breakdown phenomenon of the diode.
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Beijing Superlaser Technology Co., Ltd
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